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| (R) TPI8011N TPI12011N TRIPOLAR PROTECTION FOR ISDN INTERFACES Application Specific Discretes A.S.D.TM FEATURES s s s s s BIDIRECTIONAL TRIPLE CROWBAR PROTECTION. PEAK PULSE CURRENT : IPP = 30 A , 10/1000 s. BREAKDOWN VOLTAGE: TPI80xxN : 80V TPI120xxN : 120V. AVAILABLE IN SO-8 PACKAGES. LOW DYNAMIC BREAKOVER VOLTAGE : TPI80N : 150V TPI120 : 200V SO-8 DESCRIPTION Dedicated devices for ISDN interface and high speed data telecom line protection. Equivalent to a triple TRISIL with low capacitance. These devices provide : - low capacitance from lines to ground, allowing high speed transmission without signal attenuation. - good capacitance balance between lines in order to ensure longitudinal balance. - fixed breakdown voltage in both common and differential modes. - the same surge current capability in both common and differential modes. - A particular attention has been given to the internal wire bonding. The "4-point" configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. COMPLIES WITH THE FOLLOWING STANDARDS : CCITT K17 - K20 VDE 0433 VDE 0878 CNET 10/700 s 5/310 s 10/700 s 5/310 s 1.2/50 s 1/20 s 0.5/700 s 0.2/310 s 1.5 38 2 50 1.5 40 1.5 38 kV A kV A kV A kV A SCHEMATIC DIAGRAM Tip GND GND Ring 1 2 3 4 8 7 6 5 Tip GND GND Ring TM: ASD is a trademark of STMicroelectronics. August 2001- Ed : 3A 1/7 TPI8011N/TPI12011N ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 s 5/320 s 2/10 s tp = 10 ms t =1 s Value 30 40 90 8 3.5 - 55 to + 150 150 260 Unit A ITSM Non repetitive surge peak on-state current (F = 50 Hz). Storage temperature range Maximum junction temperature A C C Tstg Tj TL Maximum lead temperature for soldering during 10s Note 1 : Pulse waveform : 10/1000s tr=10s 5/310s tr=5s 2/10s tr=2s % I PP 100 tp=1000s tp=310s tp=10s 50 0 tr tp t THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter SO-8 Value 170 Unit C/W 2/7 TPI8011N/TPI12011N ELECTRICAL CHARACTERISTICS (Tamb = 25 C) Symbol VRM IRM VBR VBO IH IBO IPP VF C Parameter Stand-off voltage Leakage current Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Forward Voltage Drop Capacitance IRM @ VRM Types max. A TPI8011N TPI12011N 10 10 V 70 105 VBR @ IR min. V 80 120 mA 1 1 VBO max. note1 V 120 180 VBO dyn. typ. note2 V 150 200 IBO max. note1 mA 800 800 IH min. note3 mA 150 150 Note 1 : See the reference test circuit 1. Note 2 : Surge test according to CCITT 1.5kV,10/700 s between Tip or Ring and ground. Note 3 : See functional holding current test circuit 2. CAPACITANCES CHARACTERISTICS LINE A LINE A CA TPIxx CB LINE B LINE B CONFIGURATION VA =1V VB =56V VA = 56V VB= 1V CA (pF) max 70 50 CB (pF) max 50 70 CA - CB (pF) max 30 30 3/7 TPI8011N/TPI12011N REFERENCE TEST CIRCUIT 1 : TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - VOUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2 : R D.U.T. - VP VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back off-state within 50 ms max. 4/7 TPI8011N/TPI12011N Fig. 1 : Surge peak current versus overload duration. ITSM(A) 10 9 8 7 6 5 4 3 2 1 0 1E-2 1E-1 1E+0 F=50Hz Tj initial=25C t(s) 1E+1 1E+2 1E+3 APPLICATION NOTE. 1) Connect pins 2, 3, 6 and 7 to ground in order to guarantee a good surge current capability for long duration disturbances. 2) In order to take advantage of the "4-point" structure of the TPIxxxN, the Tip and Ring lines have to cross the device. In this case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. Tip 1 2 IN OUT 8 7 Tip GND 3 Ring 4 IN OUT GND 6 5 Ring 4- point structure lay-out. APPLICATION CIRCUITS : 1 - U INTERFACE PROTECTION 2 - S INTERFACE PROTECTION A A R o r PTC GND R o r PTC R o r PTC T P Ix x B T P Ix x GND A T P Ix x B R o r PTC R o r PTC GND B R o r PTC This component uses an intemal structure resulting in symetrical characteristics with a good balanced behaviour. Its topology ensures the same breakdown voltage level for positive and negative surges in differential and common mode . 5/7 TPI8011N/TPI12011N ORDER CODE TPI Bidirectional Breakdown Voltage 80 1 1 N RL Packaging: RL = Tape and reel = Tube Revision Package: 1 = SO-8 Plastic Version MARKING Package SO-8 Type TPI8011N TPI12011N Marking TP80N TP120N CONNECTION DIAGRAM SO-8 Plastic Tip GND GND Ring 1 2 3 4 8 7 6 5 Tip GND GND Ring 6/7 TPI8011N/TPI12011N PACKAGE MECHANICAL DATA SO-8 Plastic DIMENSIONS REF. A a1 a2 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 0.6 8 (max) 0.15 1.27 0.016 0.35 0.19 0.50 45 (typ) 5.0 6.2 0.189 0.228 0.050 0.150 0.157 0.050 0.024 0.197 0.244 Millimetres Inches Min. Typ. Max. Min. Typ. Max. 1.75 0.069 0.1 0.25 0.004 1.65 0.48 0.014 0.25 0.007 0.020 0.010 0.065 0.019 0.010 Packaging : Products supplied in antistatic tubes or tape and reel. Weight : 0.08g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7 |
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